Effects of argon gas flow rate and guide shell on oxygen concentration in Czochralski silicon growth
Author:
Publisher
Springer Science and Business Media LLC
Subject
Materials Chemistry,Metals and Alloys,Physical and Theoretical Chemistry,Condensed Matter Physics
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Crystallization processes for photovoltaic silicon ingots: Status and perspectives;Journal of Crystal Growth;2024-09
2. Effect of Heater Structure on Oxygen Concentration in Large Diameter N-Type Czochralski Silicon Study Using Numerical Simulation;2023
3. Processing Methods of Silicon to its Ingot: a Review;Silicon;2018-09-21
4. Experiment and numerical simulation of melt convection and oxygen distribution in 400-mm Czochralski silicon crystal growth;Rare Metals;2017-01-07
5. Ab Initio Studies of Structure, Electronic Properties, and Relative Stability of SnO2 Nanoparticles as a Function of Stoichiometry, Temperature, and Oxygen Partial Pressure;The Journal of Physical Chemistry C;2015-06-29
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