Low voltage operation of non-volatile flexible OFET memory devices using high- k P(VDF-TrFE) gate dielectric and polyimide charge storage layer-Reference-Cited by-同舟云学术

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Low voltage operation of non-volatile flexible OFET memory devices using high- k P(VDF-TrFE) gate dielectric and polyimide charge storage layer

Published:2016-11 Issue: Volume:108 Page:39-46
ISSN:1381-5148
Container-title:Reactive and Functional Polymers
language:en
Short-container-title:Reactive and Functional Polymers

Author:

Lu Mao-Shen,Wu Hung-Chin,Lin Yu-Wei,Ueda Mitsuru,Chen Wen-Chang

Funder

Ministry of Science and Technology of Taiwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Polymers and Plastics,General Chemical Engineering,Biochemistry,Environmental Chemistry,General Chemistry

Reference31 articles.

1. Donor–acceptor polymers for advanced memory device applications;Liu;Polym. Chem.,2011

2. A poly (fluorene-thiophene) donor with a tethered phenanthro [9,10-d] imidazole acceptor for flexible nonvolatile flash resistive memory devices;Wu;Chem. Commun.,2012

3. Polymer electronic memories: materials, devices and mechanisms;Ling;Prog. Polym. Sci.,2008

4. Flexible organic transistor memory devices;Kim;Nano Lett.,2010

5. Polymeric charge storage electrets for non-volatile organic field effect transistor memory devices;Chou;Polym. Chem.,2015

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4. Nanostructured interfacial dipole layers for high-performance and highly stable nonvolatile organic field-effect transistor memory;Journal of Materials Chemistry C;2022

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