Dependence of strain at the (111)Si/SiO2 interface on interfacial Si dangling-bond concentration
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference16 articles.
1. Defects at the Si(111)/SiO2interface investigated with low-energy electron diffraction
2. SiO2 film stress distribution during thermal oxidation of Si
3. ESR centers, interface states, and oxide fixed charge in thermally oxidized silicon wafers
4. Structural relaxation ofPbdefects at the (111)Si/SiO2interface as a function of oxidation temperature: ThePb-generation–stress relationship
5. 29Si hyperfine structure of unpaired spins at the Si/SiO2interface
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1. Large-enhancement nanoscale dynamic nuclear polarization near a silicon nanowire surface;Science Advances;2024-08-23
2. Photoemission Spectroscopy Study on Hydrogen Termination Effect on SiO2/Si Structure Fabricated Using H+-Implanted Si Substrate;Journal of The Electrochemical Society;2020-01-09
3. Investigations on the Si/SiO2 interface defects of silicon nanowires;Physica B: Condensed Matter;2013-01
4. Electrochemical Passivation and Modification of c-Si surfaces;Physics and Technology of Amorphous-Crystalline Heterostructure Silicon Solar Cells;2012
5. Electrochemical passivation of Si and SiGe surfaces;Handbook of Thin Films;2002
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