Towards improving the quality of semiconducting diamond layers doped with large atoms
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Reference51 articles.
1. The nature of the acceptor centre in semiconducting diamond
2. On the substitutional nitrogen donor in diamond
3. Optical absorption features associated with paramagnetic nitrogen in diamond
4. Analysis of ion implanted diamond
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1. Neutron transmutation of 10B doped diamond;Diamond and Related Materials;2007-01
2. n-type conductivity in high-fluence Si-implanted diamond;Journal of Applied Physics;2005-05-15
3. Properties of Diamond-Like Carbon Films Synthesized by Dual-Target Unbalanced Magnetron Sputtering;Chinese Physics Letters;2004-10-27
4. Electrical characterization of 10B doped diamond irradiated with low thermal neutron fluence;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004-07
5. Electrical and structural properties of boron and phosphorus co-doped diamond films;Carbon;2004
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