Electrical and structural properties of boron and phosphorus co-doped diamond films-Reference-Cited by-同舟云学术

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Electrical and structural properties of boron and phosphorus co-doped diamond films

Published:2004 Issue:8-9 Volume:42 Page:1501-1506
ISSN:0008-6223
Container-title:Carbon
language:en
Short-container-title:Carbon

Author:

Hu X.J,Li R.B,Shen H.S,Dai Y.B,He X.C

Publisher

Elsevier BV

Subject

General Chemistry,General Materials Science

Reference26 articles.

1. Nitrogen and potential n-type dopants in diamond;Kajihara;Phys. Rev. Lett.,1991

2. Electrically active sulfur-defect complexes in sulfur implanted diamond;Kalish;J. Appl. Phys.,2003

3. Growth and characterization of phosphorus doped n-type diamond thin films;Koizumi;Phys. Stat. Sol. (a),1999

4. ESR study of phosphorus implanted type IIa diamond;Casanova;Phys. Stat. Sol. (a),2000

5. Ion-implantation n-type diamond: electrical evidence;Prins;Diamond Relat. Mater.,1995

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