2.5 kV ion-implanted p+ n diodes in 6H-SiC-Reference-Cited by-同舟云学术

2.5 kV ion-implanted p+ n diodes in 6H-SiC

Published:1997-08 Issue:10 Volume:6 Page:1485-1488
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Rottner K.H.,Schöner A.,Savage S.M.,Frischholz M.,Hallin C.,Kordina O.,Janzén E.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Proc. in SiC and Related Materials;Pensl,1996

2. Boron‐implanted 6H‐SiC diodes

3. SiC and Related Materials;Ramangul;IoP Publishing no. 142,1996

4. Planar, ion implanted, high voltage 6H-SiC P-N junction diodes

5. D. Planson, M. Locatelli, S. Ortolland, J.P. Chante, H. Mitlehner, D. Stephani, Proceedings of the 1st International Power Electronics and Motion Control Conference '94, Beijing (accepted for publication).

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Beam Induced Current Measurements: Principles and Applications to SiC Device Characterization;Silicon Carbide;2011-03-28

2. Optical beam induced current measurements: principles and applications to SiC device characterization;physica status solidi (a);2009-05-21

3. Characterization of defects in the drift region of 4H-SiC pin diodes via optical beam induced current;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

4. Study of 6H–SiC high voltage bipolar diodes under reverse biases;Applied Surface Science;2001-12

5. Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation;Materials Science Forum;2000-05