Author:
Wellenhofer G.,Rössler U.
Subject
Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials
Cited by
2 articles.
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1. Origin of hole mobility anisotropy in 4H-SiC;Journal of Applied Physics;2024-02-16
2. Fundamental Aspects of SiC;Materials Science and Technology;2013-02-15