Structural and electronic properties of low dielectric constant carbon rich amorphous silicon carbide-Reference-Cited by-同舟云学术

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Structural and electronic properties of low dielectric constant carbon rich amorphous silicon carbide

Published:2003-03 Issue:3-7 Volume:12 Page:963-967
ISSN:0925-9635
Container-title:Diamond and Related Materials
language:en
Short-container-title:Diamond and Related Materials

Author:

Li Xuemei,Wong T.K.S.,Rusli ,Yang Dajiang

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Materials Chemistry,Mechanical Engineering,General Chemistry,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Dielectric and Barrier Properties of Spin-On Organic Aromatic Low Dielectric Constant Polymers FLARE and SiLK

2. Fluorinated amorphous carbon thin films grown by helicon plasma enhanced chemical vapor deposition for low dielectric constant interlayer dielectrics

3. Changes in structure and nature of defects by annealing of fluorinated amorphous carbon thin films with low dielectric constant

4. S.-M. Cho, H. M'Saad, L. Zhang, Z. Li, Electrochem. Soc. Proc., May (2000), 48

5. A.C. Ferrari, A. Libassi, B.K. Tanner, et al., Physical Review B, 62 (16) (2002) 11089

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