Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference14 articles.
1. Influence of metal/n‐InAs/interlayer/n‐GaAs structure on nonalloyed ohmic contact resistance
2. High-gain n-p-n and p-n-p InGaAs/InAlAs double-heterojunction bipolar transistors with InAs cap layers by molecular-beam epitaxy
3. Characteristics of Nonalloyed Pseudomorphic High Electron Mobility Transistors Using InAs/InxGa1-xAs(x=1→0)/AlyGa1-yAs(y=0→0.3) Contact Structures
4. Ohmic contacts to n‐GaAs using graded band gap layers of Ga1−xInxAs grown by molecular beam epitaxy
5. Thermal reliability and characterization of InGaP Schottky contact with Ti/Pt/Au metals
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