Characteristics of Nonalloyed Pseudomorphic High Electron Mobility Transistors Using InAs/InxGa1-xAs(x=1→0)/AlyGa1-yAs(y=0→0.3) Contact Structures-Reference-Cited by-同舟云学术

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Characteristics of Nonalloyed Pseudomorphic High Electron Mobility Transistors Using InAs/InxGa1-xAs(x=1→0)/AlyGa1-yAs(y=0→0.3) Contact Structures

Published:1997-06-15 Issue:Part 1, No. 6A Volume:36 Page:3443-3447
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Sheu-Shung,Lin Chien-Cheng,Lan Wen-Ho,Tu Sun-Li,Peng Chin-Kun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 50-nm Self-Aligned and “Standard” T-gate InP pHEMT Comparison: The Influence of Parasitics on Performance at the 50-nm Node;IEEE Transactions on Electron Devices;2006-12

2. Ohmic performance comparison for Ti/Ni/Au and Ti/Pt/Au on InAs/graded InGaAs/GaAs layers;Materials Chemistry and Physics;2000-02

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