Electrical and optical properties of phosphorus-doped a-SiC:H thin films
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference22 articles.
1. Substitutional doping of amorphous silicon
2. Electronic properties of substitutionally doped amorphous Si and Ge
3. Doping, Schottky barrier and pn junction formation in amorphous germanium and silicon by rf sputtering
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET;Physica Scripta;2024-01-05
2. Study of the annealing effect in optical properties for phosphorus-doped a-Si x C1− x :H films deposited by PECVD;Journal of Physics D: Applied Physics;2023-07-06
3. Effects of phosphorus on the electrical characteristics of plasma deposited hydrogenated amorphous silicon carbide thin films;SOLID STATE ELECTRON;2018
4. SiC Coatings Deposited by RF Magnetron Sputtering;Key Engineering Materials;2007-02
5. Effect of annealing on mechanical and optical properties of in-situ doped SiC thin films;SPIE Proceedings;2001-10-15
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