Fabrication of highly conductive phosphorous-doped nc-SiCx:H thin film on PET

Author:

Liu JiaORCID,Sun Ruirui,Tang Chunjuan,Wang Longgang,Liu Chuanwei,Gao Huaiping,Guo Guanglei,Liu Lina,An Xiuyun,Shan Feng,Sun Hui,Hu Qiubo

Abstract

Abstract Plasma enhanced chemical vapor deposition (PECVD) method has been utilized to fabricate phosphorous-doped hydrogenated nanocrystalline silicon carbide (P-doped nc-SiCx:H) thin films on polyethylene terephthalate (PET) substrate. With the aim at obtaining highly conductive thin films, H2/Ar mixed dilution has been applied for creating plasma during deposition, and the variation of structural, electrical and optical properties with H2/Ar flow ratio RH have been systemically investigated through a series of characterizations. Results show that the highly crystallized P-doped nc-SiCx:H thin film can be prepared while the properties are controllable through adjusting RH. In the case of RH = 0.75, the maximum dark conductivity (6.42 S cm−1) and a wide optical bandgap (1.93 eV) are attained. Finally, detail discussion has been made to illustrate the growth mechanism of the flexible P-doped nc-SiCx:H thin films.

Funder

Universities of Henan Province

National Natural Science Foundation of China

Funding Scheme for Key Scientific Research

Collage Students Innovation and Entrepreneurship Training Program of Henan Province

Key Science and Technology Program of Henan Province

Publisher

IOP Publishing

Subject

Condensed Matter Physics,Mathematical Physics,Atomic and Molecular Physics, and Optics

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