Experiments in MIS structure based on germanium and improvements of the interfacial properties
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science
Reference9 articles.
1. Interface Properties of Al2O3-Ge Structure and Characteristics of Al2O3-Ge MOS Transistors
2. Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. II. Composition, properties, and the interface with a semiconductor
3. Preparation of Germanium Nitride Films by Low Pressure Chemical Vapor Deposition
4. Chemical Etching of Germanium with H3PO4–H2O2–H2O Solution
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1. Low-cost high-quality crystalline germanium based flexible devices;physica status solidi (RRL) - Rapid Research Letters;2014-06-16
2. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors;MRS Bulletin;2009-07
3. Interface studies of ALD-grown metal oxide insulators on Ge and III–V semiconductors (Invited Paper);Microelectronic Engineering;2009-07
4. Characteristics of Ultrathin Lanthanum Oxide Films on Germanium Substrate: Comparison with Those on Silicon Substrate;Japanese Journal of Applied Physics;2007-04-13
5. Short minority carrier response time in HfO2 /Ge metal-insulator-semiconductor capacitors;Microelectronic Engineering;2005-06
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