Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. II. Composition, properties, and the interface with a semiconductor-Reference-Cited by-同舟云学术

Nonstoichiometric germanium nitride. A new insulating material for MIS microelectronics. II. Composition, properties, and the interface with a semiconductor

Published:1983-08-16 Issue:2 Volume:78 Page:391-400
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

Bagratishvili G. D.,Dzhanelidze R. B.,Jishiashvili D. A.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. and , Injection Contact Phenomena in Semiconductors, Naukova Dumka, Kiev 1981 (in Russian).

2. Mechanism of charge flow through the MGe3N4GaAs structure

3. The LSI Component Structure, Izd. Nauka, Novosibirsk 1980 (in Russian)

4. (Ed)., Silicon Nitride in Electronics, Izd. Nauka, Novosibirsk 1981 (in Russian).

5. Some properties of plasma-grown GaAs oxides

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