High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates-Reference-Cited by-同舟云学术

High-efficiency InGaP/In0.01Ga0.99As tandem solar cells lattice-matched to Ge substrates

Published:2001-02 Issue:1-4 Volume:66 Page:511-516
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Takamoto Tatsuya,Agui Takaaki,Ikeda Eiji,Kurita Hiroshi

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference5 articles.

1. S.R. Kurtz, D. Myers, J.M. Olson, Procedings of the 26th IEEE Photovoltaic Specialists Conference, 1998, p. 875.

2. Over 30% efficient InGaP/GaAs tandem solar cells

3. T. Takamoto, M. Yamaguchi, S.J. Taylor, E. Ikeda, T. Agui, H. Kurita, Proceedings of the 26th IEEE Photovoltaic Specialists Conference, 1998, p. 887.

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Efficiency III-V Single-Junction and Multi-junction Solar Cells;Semiconductor Photovoltaic Cells;2021

2. 3.0 MeV proton-irradiation induced non-radiative recombination center in the GaAs middle cell and the GaInP top cell of triple-junction solar cells;IOP Conference Series: Earth and Environmental Science;2017-11

3. Temperature-Dependent Photoluminescence Analysis of 1.0 MeV Electron Irradiation-Induced Nonradiative Recombination Centers in n${}^{+}$–p GaAs Middle Cell of GaInP/GaAs/Ge Triple-Junction Solar Cells;Chinese Physics Letters;2017-07

4. Radiation Damage Analysis of Individual Subcells for GaInP/GaAs/Ge Solar Cells Using Photoluminescence Measurements;Chinese Physics Letters;2017-02

5. Epitaxial Al x Ga1 – x As:Mg alloys with different conductivity types;Semiconductors;2017-01