3.0 MeV proton-irradiation induced non-radiative recombination center in the GaAs middle cell and the GaInP top cell of triple-junction solar cells
Author:
Publisher
IOP Publishing
Subject
General Engineering
Link
http://stacks.iop.org/1755-1315/93/i=1/a=012060/pdf
Reference17 articles.
1. Multi-junction III–V solar cells: current status and future potential
2. Performance Evaluation and Prediction of Single-Junction and Triple-Junction GaAs Solar Cells Induced by Electron and Proton Irradiations
3. Radiation effects in solar cells
4. Prediction of solar cell degradation in space from the electron–proton equivalence
5. Majority- and minority-carrier deep level traps in proton-irradiated n+/p-InGaP space solar cells
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1. Defect analysis of 1-MeV electron irradiated flexible InGaAs solar cells by deep-level transient spectroscopy and photoluminescence;Materials Science in Semiconductor Processing;2024-03
2. Degradation characteristics and equivalent analysis of InGaAsP space solar cells under proton and neutron irradiation;Microelectronics Reliability;2023-12
3. Flexible photoelectronic material device and investigation method for space applications;Progress in Aerospace Sciences;2023-05
4. 532 nm波长连续激光辐照下GaAs光伏电池的转换特性及损伤;Laser & Optoelectronics Progress;2022
5. Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell;Materials;2020-04-22
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