Mechanisms and computer modelling of transition element gettering in silicon

Author:

Schröter W,Kveder V,Seibt M,Sattler A,Spiecker E

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference34 articles.

1. New materials;Möller,2000

2. H. Alexander, H. Teichler, J.Thibault, J.-L. Rouviere, A. Bourret, Dislocations and grain boundaries in semiconductors, in: K.A. Jackson, W. Schröter (Eds.), Handbook of Semiconductor Technology, Vol. 1, Wiley-VCH, Weinheim, 2000, p. 291 and 377.

3. Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior

4. Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers

5. S.A. Mc Hugo, A.C. Thomson, G. Lamble, C. Flink, E.R. Weber, Physica B 273–274 (1999) 371. Cell Materials and Processes 1999, Extended Abstracts and Papers, p. 116.

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