Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thickness
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference33 articles.
1. 1.3 μm room-temperature GaAs-based quantum-dot laser
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5. Strain-interactions between InAs/GaAs quantum dot layers
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