Improvement of the short channel effect in PMOSFETs using cold implantation-Reference-Cited by-同舟云学术

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Improvement of the short channel effect in PMOSFETs using cold implantation

Published:2016-10 Issue: Volume:82 Page:31-34
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Lee Suk Hun,Park Se Geun,Jeong Seong Hoon,Jung Hyuck-Chai,Kim Il Gweon,Kang Dong-Ho,Nam Hyo-Jik,Kim Dae Jung,Lee Kyu Pil,Choi Joo Sun,Jung Woosuk,Park Yongkook,Choi Changhwan,Park Jin-Hong

Funder

Korea government (MSIP)

Human Resources Development program

Korea government Ministry of Trade, Industry and Energy

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference16 articles.

1. Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's

2. Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel

3. Formation of Amorphous Silicon by Ion Bombardment as a Function of Ion, Temperature, and Dose

4. Effect of amorphization and carbon co-doping on activation and diffusion of boron in silicon

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Damage and annealing recovery of boron-implanted ultra-shallow junction: The correlation between beam current and surface configuration;Applied Surface Science;2018-03

2. The chemical states and atomic structure evolution of ultralow-energy high-dose Boron implanted Si(110) via laser annealing;Scientific Reports;2017-10-12

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