Visible-blind ultraviolet photodetectors on porous silicon carbide substrates
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference12 articles.
1. Hydrogen monitoring for power plant applications using SiC sensors
2. 4H–SiC ultraviolet avalanche photodetectors with low breakdown voltage and high gain
3. Morphological and optical characterization of porous silicon carbide
4. Fabrication of Silicon Carbide Thin Film as a Stabilizing Layer for Improving the Stability of Porous Silicon Photodiodes
5. Effect of different current densities on optical properties of porous silicon carbide using photo-electrochemical etching
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2. High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays;ACS Applied Materials & Interfaces;2023-05-06
3. Electrochemical etching modes of 4H-SiC in KOH solutions;Semiconductor Science and Technology;2023-04-13
4. Redistribution of centers responsible for radiative recombination in SiC/por-SiC and SiC/por-SiC/Er2O3 structures under nonthermal action of microwave radiation;Semiconductor Physics, Quantum Electronics and Optoelectronics;2022-12-22
5. Elastic and mechanical properties of aluminium and silicon carbide using density functional theory and beyond;Solid State Communications;2021-08
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