Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor-Reference-Cited by-同舟云学术

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Improved stability of aluminum co-sputtered indium zinc oxide thin-film transistor

Published:2017-12 Issue: Volume:96 Page:155-159
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Park Ji-in,Lim Yooseong,Jang Minhyung,Choi Seung-il,Hwang Namgyung,Yi Moonsuk

Funder

Creative Human Resource Development Program for IT Convergence of BK21PLUS

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference21 articles.

1. Oxygen-dependent instability and annealing/passivation effects in amorphous In-Ga-Zn-O thin-film transistors;Chen;Electron Device Lett.,2011

2. Role of high-k gate insulators for oxide thin film transistors;Lee;Thin Solid Films,2010

3. Effects of Ga composition ratio and annealing temperature on the electrical characteristic of solution processed IGZO thin-film transistors;Lee;J. Semicond. Technol. Sci.,2014

4. Improved mobility and conductivity of an Al2O3 incorporated indium zinc oxide system;Sun;J. Appl. Phys. Lett.,2011

5. Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors;Jeong;Adv. Mater.,2009

Cited by 28 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Viable Approach of Tuning Oxide Semiconductor Thin Films in Solution‐Processed Heterojunction Thin Films Transistors for Both Higher Performances and Stability;Advanced Electronic Materials;2024-08-27

2. Indium Zinc Oxide pH Sensors: Fabrication, Measurement, and Applications;Sensors and Materials;2024-03-25

3. Enhancement of electrical performance in indium-zinc oxide thin-film transistors with HfO2/Al2O3 gate insulator deposited via low-temperature ALD;Displays;2023-12

4. Highly Robust Atomic Layer Deposition‐Indium Gallium Zinc Oxide Thin‐Film Transistors with Hybrid Gate Insulator Fabricated via Two‐Step Atomic Layer Process for High‐Density Integrated All‐Oxide Vertical Complementary Metal‐Oxide‐Semiconductor Applications;Small Structures;2023-11-21

5. Comparative Study on the Effects of O₂ Flow Rate on As-Deposited Polycrystalline IAZO Films;ACS Applied Engineering Materials;2023-11-17

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