Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature-Reference-Cited by-同舟云学术

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Amorphous InGaZnO thin film transistors with SiO2/HfO2 double-layer gate dielectric fabricated at low temperature

Published:2012-10 Issue:10 Volume:47 Page:2923-2926
ISSN:0025-5408
Container-title:Materials Research Bulletin
language:en
Short-container-title:Materials Research Bulletin

Author:

Kim Ji-Hong,Kim Jae-Won,Roh Ji-Hyung,Lee Kyung-Ju,Do Kang-Min,Shin Ju-Hong,Koo Sang-Mo,Moon Byung-Moo

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference12 articles.

1. ZnO-based transparent thin-film transistors

2. Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

3. Transparent thin film transistors using ZnO as an active channel layer and their electrical properties

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering

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1. Low temperature plasma deposited SiO2/organosilicon stacked film for transparent gate dielectric of InGaZnO thin film transistor;Thin Solid Films;2024-01

2. Development of CdSe films as an active channel layer for applications in thin film transistors;AIP Conference Proceedings;2024

3. Microstructure design and optimization of high-sensitivity interdigital capacitive humidity sensor based on uncertainty analysis;Measurement;2023-11

4. Mechanism of External Stress Instability in Plasma-Enhanced ALD-Derived HfO₂/IGZO Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-05

5. Optical, mechanical and thermal properties in HfO2-doped TiO2-LaO3/2 glasses fabricated by aerodynamic levitation;Materials Research Bulletin;2023-02

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