Lattice buffer effect of Ti film on the epitaxial growth of Ag nanotwins on Si substrates with various orientations-Reference-Cited by-同舟云学术

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Lattice buffer effect of Ti film on the epitaxial growth of Ag nanotwins on Si substrates with various orientations

Published:2020-09 Issue: Volume:167 Page:110509
ISSN:1044-5803
Container-title:Materials Characterization
language:en
Short-container-title:Materials Characterization

Author:

Chuang Tung-Han,Wu Po-Ching,Lin Yan-Cheng

Funder

Wire Technology Co., LTD.

Ministry of Science and Technology, Taiwan

Ag Materials Technology Co., LTD.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference29 articles.

1. Physical Metallurgy;Cahn,1970

2. Studies on twinning and grain boundary character distribution during anomalous grain growth in a Ti-modified austenitic stainless steel;Mandal;Mater. Sci. Eng. A,2009

3. About the possibility of grain boundary engineering via hot-working in a nickel-base superalloy;Souai;Scr. Mater.,2010

4. Effect of thermomechanical processing on grain boundary characteristics in two-phase brass;Lee;Mater. Sci. Eng. A,2003

5. Effect of annealing twins on Hall–Petch relation in polycrystalline materials;Pande;Mater. Sci. Eng. A,2004

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