1. Room-temperature single-electron memory
2. Takahashi, Y., Nagase, M., Namatsu, H., Kurihara, K., Iwadate, K., Nakajima, Y., Horiguchi, S., Murase K. and Tabe, M., Technical Digest of International Electron Devices Meeting, 1994, p. 938
3. Room Temperature Coulomb Blockade and Low Temperature Hopping Transport in a Multiple-Dot-Channel Metal-Oxide-Semiconductor Field-Effect-Transistor
4. Matsumoto, K., Ishii, M., Segawa, K., Oka, Y., Vartanian, J. B. and Harris, J. S., Ext. Abstr. of the 1995 Int. Conf. Solid State Devices and Materials, 1995, p. 192
5. Observation of Conductance Quantization in A Novel Schottky In-Plane Gate Wire Transistor Fabricated by Low-Damage In Situ Electrochemical Process