Simulation and machine learning based analytical study of single electron transistor (SET)
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Publisher
Springer Science and Business Media LLC
Link
https://link.springer.com/content/pdf/10.1007/s10825-024-02175-4.pdf
Reference35 articles.
1. Herrera, F.Á., Miura-Mattausch, M., Iizuka, T., Kikuchihara, H., Hirano, Y. and Mattausch, H.J.:Modeling of short-channel effect on multi-gate MOSFETs for circuit simulation. In: 2020 International Symposium on Devices. Circuits and Systems (ISDCS.). pp. 1–4 (2020). https://doi.org/10.1109/ISDCS49393.2020.9263000
2. Das, S., Dey, S., Dash, T.P., Mohapatra, E., Jena, J.R., Maiti, C.K.: Impacts of NBTI and hot-carrier stress on silicon nanowire transistor characteristics. Nanomater. Energy 8(2), 151–158 (2019). https://doi.org/10.1680/jnaen.19.00022
3. Ratnesh, R.K., Goel, A., Kaushik, G., Garg, H., Singh, M., Prasad, B.: Advancement and challenges in MOSFET scaling. Mater. Sci. Semicond. Process. 134, 106002 (2021). https://doi.org/10.1016/j.mssp.2021.106002
4. Tachiki, K., Ono, T., Kobayashi, T., Kimoto, T.: Short-channel effects in SiC MOSFETs based on analyses of saturation drain current. IEEE Trans. Electron Devices 68(3), 1382–1384 (2021). https://doi.org/10.1109/TED.2021.3053518
5. Shah, R., Parekh, R., Dhavse, R.: Design strategy and simulation of single-gate SET for novel SETMOS hybridization. J. Comput. Electron. 20, 218–229 (2021). https://doi.org/10.1007/s10825-020-01622-2
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