High frequency CV measurements of SiC MOS capacitors-Reference-Cited by-同舟云学术

High frequency CV measurements of SiC MOS capacitors

Published:1998-06 Issue:6 Volume:42 Page:915-920
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Berberich S,Godignon P,Locatelli M.L,Millán J,Hartnagel H.L

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference22 articles.

1. Comparison of 6H-SiC, 3C-SiC, and Si for power devices

2. Critical nature of oxide/interface quality for SiC power devices

3. Band offsets and electronic structure of SiC/SiO2interfaces

4. Harris, G. L., Properties of Silicon Carbide, 1st edn., IEE INSPEC, 1995

5. Shenoy, J. N., Lipkin, L. A., Chindalore, G. L., Pan, J., Cooper, Jr., J. A., Palmour, J. W. and Melloch, M. R., Proceedings of the Int. Compound Semicond., San Diego, 18–22 September 1994

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