Supersonic jet epitaxy of silicon carbide on silicon using methylsilane-Reference-Cited by-同舟云学术

Supersonic jet epitaxy of silicon carbide on silicon using methylsilane

Published:1998-12 Issue:12 Volume:42 Page:2321-2327
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ustin S.A.,Long C.,Ho W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Rare-Earth Doping in SiC for Light-Emitting Devices

2. Single‐crystalline, epitaxial cubic SiC films grown on (100) Si at 750 °C by chemical vapor deposition

3. Structural and electronic characterization of β-SiC films on Si grown from mono-methylsilane precursors

4. Lubben, D., Jellison, G. E. and Modine, F. A., in Proceedings of the Sixth International Conference on Silicon Carbide and Related Materials (ICSCRM), ed. S. Nakashima, H. Matsunami, S. Yoshida and H. Harima, Kyoto, 1995, p. 217

5. Low temperature chemical vapor deposition growth of β-SiC on (100) Si using methylsilane and device characteristics

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