Reliability considerations in scaled SONOS nonvolatile memory devices

Author:

Yang Yang (Larry),Purwar Ansha,White Marvin H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. A floating gate and its application to memory devices;Kahng;Bell Syst. Tech. J.,1967

2. Wegner HAR, Lincoln AJ, Pao HC, O'Connel MR, Oleksiok RE. Metal-insulator-semiconductor transistor as a nonvolatile storage element. IEEE IEDM Abstract 1967, p. 58

3. Scaling of multidielectric nonvolatile SONOS memory structures;French;Solid-State Electron.,1995

4. A low voltage SONOS nonvolatile semiconductor memory technology;White;IEEE Trans. Comp. Pack. and Manu. Tech. part A,1997

5. A new portrayal of electron and hole traps in amorphous silicon nitride;Kamigaki;J. Appl. Phys.,1990

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