On the determination of interface state density in n-InP Schottky structures by current–voltage measurements
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. High‐barrier height Schottky diodes onN‐InP by deposition on cooled substrates
2. Large Schottky barrier heights onn‐InP−A novel approach
3. Barrier height enhancement of Pt/n-InP Schottky diodes by P2S5/(NH4)2S solution treatment of the InP surface
4. Inteface-controlled Schottky barriers on InP and related materials
5. Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
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