Barrier height enhancement of Pt/n-InP Schottky diodes by P2S5/(NH4)2S solution treatment of the InP surface
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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3. Frequency dependent C–V and G/ω–V characteristics on the illumination-induced Au/ZnO/n-GaAs Schottky barrier diodes;Journal of Materials Science: Materials in Electronics;2016-11-29
4. Reverse-bias Leakage Current Mechanisms in Cu/n-type Schottky Junction Using Oxygen Plasma Treatment;Transactions on Electrical and Electronic Materials;2016-04-25
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