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Electrical characteristics modeling of large area boron

  • Published:2000-04 Issue:4 Volume:44 Page:571-579
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Brezeanu G.,Badila M.,Tudor B.,Godignon P.,Millan J.,Locatelli M.L.,Chante J.P.,Lebedev A.,Savkina N.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Silicon carbide high-power devices;Weitzel;IEEE Trans. on Electron. Dev.,1996

2. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high temperature applications: a review;Casady;Solid-St. Electron.,1996

3. Overview of SiC power electronics;Chelnokov;Diamond and Rel. Material.,1997

4. Vital issues for SiC power devices;Hara,1997

5. Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+nn+ structures;Ortolland;J. Appl. Phys.,1996

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Selective doping of 4H–SiC by codiffusion of aluminum and boron;Journal of Applied Physics;2001-12

2. Accurate modeling and parameter extraction for 6H-SiC Schottky barrier diodes (SBDs) with nearly ideal breakdown voltage;IEEE Transactions on Electron Devices;2001

3. An improved technology of 6H-SiC power diodes;Microelectronics Journal;2000-12

4. Selective Doping of 4H-SiC by Aluminum/Boron Co-diffusion;MRS Proceedings;2000

5. High performance SiC diodes based on an efficient planar termination;2003 International Semiconductor Conference. CAS 2003 Proceedings (IEEE Cat. No.03TH8676)
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