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A review of narrow-channel effects for STI MOSFET's: A difference between surface- and buried-channel cases

  • Published:1999-11 Issue:11 Volume:43 Page:2061-2066
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Shigyo Naoyuki,Hiraoka Takayuki

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Subthreshold Layout Strategy for Faster and Lower Energy Complex Digital Circuits;Journal of Low Power Electronics and Applications;2022-08-02

2. The Effect Of STI Divot on Planner Logic Device Performance Study;2022 China Semiconductor Technology International Conference (CSTIC);2022-06-20

3. Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs;IEEE Journal of the Electron Devices Society;2022

4. Physical Mechanism for Different Phases and Turn-Around of Idsat in PMOS under HCI Stress;2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA);2021-09-15

5. Influence of Halo Implantations on the Total Ionizing Dose Response of 28-nm pMOSFETs Irradiated to Ultrahigh Doses;IEEE Transactions on Nuclear Science;2019-01
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