High performance pseudomorphic power HEMTs-Reference-Cited by-同舟云学术

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High performance pseudomorphic power HEMTs

Published:1997-12 Issue:12 Volume:41 Page:1913-1915
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ren F.,Lothian J.R.,Tsai H.S.,Kuo J.M.,Lin J.,Weiner J.S.,Ryan R.W.,Tate A.,Chen Y.K.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. 2.2 V Operation power heterojunction FET for personal digital cellular telephones

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-performance enhancement-mode pseudomorphic InGaP/InGaAs/GaAs HEMT structures by gas source molecular beam epitaxy;Journal of Crystal Growth;2003-04

2. Field effect transistors: FETs and HEMTs;Thin Films;2001

3. Performance dependence of InGaP/InGaAs/GaAs pHEMTs on gate metallization;IEEE Electron Device Letters;1999-11

4. Study of NH 3 Plasma Damage on GaAs Schottky Diode in Inductively Coupled Plasma System;Journal of The Electrochemical Society;1999-07-01

5. New plasma chemistries for dry etching of InGaAlP alloys: BI[sub 3] and BBr[sub 3];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1998-09

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