Electrical characterisation of Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation-Reference-Cited by-同舟云学术

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Electrical characterisation of Al/n–Si/p–Si Schottky junctions prepared by plasma immersion implantation

Published:1998-03 Issue:2 Volume:42 Page:221-228
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Horváth Zs.J.,Ádám M.,Dücsö Cs.,Pintér I.,Van Tuyen Vo,Bársony I.,Gombia E.,Mosca R.,Makaró Zs.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference56 articles.

1. Schottky barriers on p-type silicon

2. Formation of NiSi and current transport across the NiSi-Si interface

3. Schottky contacts of Gd‐Pt and Gd‐V alloys onn‐Si andp‐Si

4. A study of vanadium as diffusion barrier between aluminum and gadolinium silicide contacts

5. Schottky-barrier heights of Ti andTiSi2onn-type andp-type Si(100)

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3. Barrier characteristics of biopolymer-based organic/inorganic Au/CTS/n-InP hybrid junctions;Philosophical Magazine;2015-09-28

4. Schottky barrier height engineering of Al contacts on Si by embedded Au nanoparticles;Microelectronic Engineering;2015-02

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