The problems originating from the grain boundaries in dielectric storage capacitors-Reference-Cited by-同舟云学术

The problems originating from the grain boundaries in dielectric storage capacitors

Published:2002-10 Issue:10 Volume:46 Page:1651-1657
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Jang-Sik,Joo Seung-Ki

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

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3. Integration technology for ferroelectric memory

4. Jang NW, Song YJ, Kim HH, Jung DJ, Koo BJ, Lee SY, Joo SH, Lee KM, Kim K. 2000 Symposium on VLSI Technology. Digest of Technical Papers, vol. 34, 2000

5. High density ferroelectric memories: Materials, processing and scaling

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