Author:
Schulz T,Rösner W,Landgraf E,Risch L,Langmann U
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Self-aligned (top and bottom) double-gate MOSFET with a 25 nm thick silicon channel;Wong;Tech Digest IEDM,1997
2. Silicon-on-insulator gate-all-around device;Colinge;Tech Digest IEDM,1990
3. Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxie;Lee;Tech Digest IEDM,1999
4. A fully depleted lean-channel transistor (DELTA)––a novel vertical ultra thin SOI MOSFET;Hisamoto;IEEE Electron Dev Lett,1990
5. A folded-channel MOSFET for deep-sub-tenth micron era;Hisamoto;Tech Digest IEDM,1998
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