Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors-Reference-Cited by-同舟云学术

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Analysis of two-dimensional effects on subthreshold current in submicron MOS transistors

Published:2002-08 Issue:8 Volume:46 Page:1133-1137
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Mutlu Ayhan A,Gunther Norman G,Rahman Mahmud

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. IEDM technical digest;Jeng,1987

2. IEDM technical digest;Sai-Halasz,1987

3. IEDM technical digest;Horiguchi,1985

4. A subthreshold model conduction simulation of submicron MOSFET;Chan;IEEE Trans. Comput. Aided Design,1987

5. Operation and modeling of the MOS transistor;Tsividis,1987

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