Correlation and Model for RF Performance (<I>f<SUB>T</SUB></I>) Variability Due to Random Dopant Fluctuation in Nanoscale MOSFETs-Reference-Cited by-同舟云学术

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Correlation and Model for RF Performance (f_T) Variability Due to Random Dopant Fluctuation in Nanoscale MOSFETs

Published:2014-03-01 Issue:3 Volume:6 Page:227-230
ISSN:1941-4900
Container-title:Nanoscience and Nanotechnology Letters
language:en
Short-container-title:Nanosci Nanotechnol Lett

Author:

Lü Wei-Feng,Sun Ling-Ling

Publisher

American Scientific Publishers

Subject

General Materials Science

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis and Modeling of Drain-Induced Barrier Lowering Variation Induced by Random Dopants in Nanometer MOSFET Channel;Nanoscience and Nanotechnology Letters;2017-08-01

2. Investigation on Gate Capacitances Fluctuation Due to Work-Function Variation in Metal-Gate FinFETs;FRONT ARTIF INTEL AP;2017

3. Statistical Modeling of Gate Capacitance Variations Induced by Random Dopants in Nanometer MOSFETs Reserving Correlations;Chinese Physics Letters;2015-10

4. Analytical modeling of cutoff frequency variability reserving correlations due to random dopant fluctuation in nanometer MOSFETs;Solid-State Electronics;2015-03

5. A 94-GHz Frequency Doubler in Nano-Scale CMOS Technology for W-Band Millimeter Wave Passive Imaging Systems;Nanoscience and Nanotechnology Letters;2014-12-01

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