Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma-Reference-Cited by-同舟云学术

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Properties of 1.3 μm InGaNAs laser material grown by MBE using a N2/Ar RF plasma

Published:2003-03 Issue:3 Volume:47 Page:399-405
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Gupta J.A,Barrios P.J,Aers G.C,Williams R.L,Ramsey J,Wasilewski Z.R

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. GaInNAs: A novel material for long-wavelength semiconductor lasers;Kondow;IEEE J. Sel. Top. Quantum Electron.,1997

2. A novel GaInNAs–GaAs quantum-well structure for long-wavelength semiconductor lasers;Miyamoto;IEEE Photon. Technol. Lett.,1997

3. Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes;Borchert;IEEE Photon. Technol. Lett.,2000

4. Growth of 1.3 μm InGaAsN laser material on GaAs by molecular beam epitaxy;Mars;J. Vac. Sci. Technol. B,1999

5. 8W continuous wave operation of InGaAsN lasers at 1.3 μm;Livshits;Electron. Lett.,2000

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling Dilute Nitride 1.3 μm Quantum Well Lasers: Incorporation of N Compositional Fluctuations;IEEE Journal of Selected Topics in Quantum Electronics;2013-09

2. Role of ion damage on unintentional Ca incorporation during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides using N[sub 2]∕Ar source gas mixtures;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

3. Effects of different plasma species (atomic N, metastable N2*, and ions) on the optical properties of dilute nitride materials grown by plasma-assisted molecular-beam epitaxy;Applied Physics Letters;2007-11-05

4. Molecular beam epitaxy growth of GaInNAs(Sb) double quantum wells with bright and narrow photoluminescence;Journal of Crystal Growth;2006-05

5. Ion damage effects from negative deflector plate voltages during the plasma-assisted molecular-beam epitaxy growth of dilute nitrides;Applied Physics Letters;2005-05-30

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