An enhanced compact waffle MOSFET with low drain capacitance from a standard submicron CMOS technology-Reference-Cited by-同舟云学术

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An enhanced compact waffle MOSFET with low drain capacitance from a standard submicron CMOS technology

Published:2003-05 Issue:5 Volume:47 Page:785-789
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lam Sang,Mok Philip K.T.,Ki Wing-Hung,Ko Ping K.,Chan Mansun

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. Fundamentals of modern VLSI devices;Taur,1998

2. The art of analog layout;Hastings,2001

3. Design of analog–digital VLSI circuits for telecommunications and signal processing,1994

4. Mixed analog–digital VLSI devices and technology: an introduction;Tsividis,1996

5. Analog integrated circuit design;Johns,1997

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2. Impact of multi-finger MOSFET geometry on the electrical performance of RF circuits;Microelectronics Reliability;2022-02

3. Experimental Comparative Study Between the Wave Layout Style and its Conventional Counterpart for Implementation of Analog Integrated Circuits;ECS Transactions;2012-08-30

4. A 0.35-μm CMOS frequency divider implemented with the waffle injection MOSFET;Microwave and Optical Technology Letters;2011-04-22

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