Author:
Chen J.H,Wei C.T,Hung S.M,Wong S.C,Wang Y.H
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference23 articles.
1. Linder BP, Stathis JH, Wachnik RA, Wu E, Ray SACA, Vayshenker A. Gate oxide breakdown under current limited constant voltage stress. Symposium on VLSI Technology, 2000. p. 214–5
2. Correlation of lifetimes from CVS and RVS using the 1/E-model for thermally grown oxides on polysilicon;Martin;Int. Integr. Reliab. Workshop,1994
3. Correlation between two time-dependent dielectric breakdown measurements for the gate oxides damaged by plasma processing;Eriguchi;IEEE Trans. Electron Dev.,1998
4. Model relating wearout to breakdown in thin oxides;Dumin;IEEE Trans. Electron Dev.,1994
5. Stress-induced current in nitride and oxidized nitride thin films;Mazumder;IEEE Trans. Electron Dev.,1994
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献