Influence of Si/SiO2 interface properties on electrical performance and breakdown characteristics of ultrathin stacked oxide/nitride dielectric films
Author:
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry
Reference63 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Ultrathin nitrided gate dielectrics: Plasma processing, chemical characterization, performance, and reliability
3. The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealing
4. Improvement of gate dielectric reliability for p+poly MOS devices using remote PECVD top nitride deposition on ultra-thin (2.4–6 nm) gate oxides
5. Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
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