GaN/SiC heterojunction bipolar transistors-Reference-Cited by-同舟云学术

GaN/SiC heterojunction bipolar transistors

Published:2000-07 Issue:7 Volume:44 Page:1229-1233
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Torvik J.T,Pankove J.I,Zeghbroeck B.Van

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Pensl G, Morkoc H, Monemar B, Janzen E, editors. Proc Seventh Int Conf on SiC, III-nitrides and related materials. Enfield, USA: Trans Tech Publications

2. Capano MA, Trew RJ, editors. Mat Res Soc Bull 1997;22(3):19–56

3. Pankove JI, Moustakas TD, editors. Semiconductors and semimetals, vol. 50. Gallium Nitride (GaN) I. New York: Academic Press, 1997

4. Pankove JI, Moustakas TD, editors. Semiconductors and semimetals, vol. 57. Gallium Nitride (GaN) II. New York: Academic Press, 1998

5. McCartney L, Kozodoy P, Rodwell M, DenBaars S, Mishra U. Comp Semicond 1998;4(8)

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A low cost n-SiCN/p-PS/p-Si heterojunction for high temperature ultraviolet detecting applications;Sensors and Actuators A: Physical;2018-08

2. Studies of n-SiCN/p-Si diode for low cost and high temperature ultraviolet light sensing applications;Sensors and Actuators A: Physical;2016-06

3. The interface analysis of GaN grown on 0° off 6H-SiC with an ultra-thin buffer layer;Japanese Journal of Applied Physics;2015-12-04

4. A comparative study of lateral SiCN/porous silicon and vertical SiCN/porous silicon junctions for sensing ultraviolet light;Solid-State Electronics;2015-12

5. n-Al0.15Ga0.85N/p-6H–SiC heterostructure and based bipolar transistor;Microelectronics Reliability;2010-12