Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors-Reference-Cited by-同舟云学术

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Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors

Published:2000-08 Issue:8 Volume:44 Page:1361-1365
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Dimitrov R,Tilak V,Yeo W,Green B,Kim H,Smart J,Chumbes E,Shealy J.R,Schaff W,Eastman L.F,Miskys C,Ambacher O,Stutzmann M

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Results, Potential and Challenges of High Power GaN-Based Transistors

2. High Al-content AlGaN/GaN MODFETs for ultrahigh performance

3. Progress and prospects of group-III nitride semiconductors

4. Comparison of high field electron transport in GaN and GaAs

5. Comparison of N-face and Ga-face AlGaN/GaN-Based High Electron Mobility Transistors Grown by Plasma-Induced Molecular Beam Epitaxy

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1. Wet etching in β-Ga2O3 bulk single crystals;CrystEngComm;2022

2. GaN-Based Nanowire Transistors;Power Electronics and Power Systems;2016-09-09

3. Formation of GaN porous structures with improved structural controllability by photoassisted electrochemical etching;Japanese Journal of Applied Physics;2016-03-10

4. Feasibility of Etching Studies on BCN Thin Films;ECS Journal of Solid State Science and Technology;2016

5. A Remote-Oxygen-Plasma Surface Treatment Technique for III-Nitride Heterojunction Field-Effect Transistors;IEEE Transactions on Electron Devices;2014-02

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