Calculation of figures of merit of Si/Si1−x−yGexCy/Si HBTs and their optimization
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Germanium–silicon strained layers and heterostructures;Jain,1994
2. Ternary SiGeC alloys: growth and properties of a new semiconducting material
3. Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation
4. Si/Si/sub 1-x-y/GexCy/Si heterojunction bipolar transistors
5. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits
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1. Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling;IEEE Transactions on Electron Devices;2011-11
2. First- and second-order electrical modelling and experiment on very high speed SiGeC heterojunction bipolar transistors;Semiconductor Science and Technology;2009-03-06
3. Substitutional C effect on generation lifetime in MBE-grown SiGeC layers;Semiconductor Science and Technology;2008-12-18
4. Research on reverse recovery characteristics of SiGeC p-i-n diodes;Chinese Physics B;2008-12
5. High-power low-loss fast and soft recovery SiGeC switching power diodes;Acta Physica Sinica;2007
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