Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119110
Reference7 articles.
1. Heterojunction bipolar transistors with SiGe base grown by molecular beam epitaxy
2. The effects of base dopant outdiffusion and undoped Si/sub 1-x/Ge/sub x/ junction spacer layers in Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors
3. Parasitic energy barriers in SiGe HBTs
4. Growth of Si1−xGex by rapid thermal chemical vapor deposition and application to heterojunction bipolar transistors
5. Si/Si/sub 1-x-y/GexCy/Si heterojunction bipolar transistors
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2. Integrated Silicon Optoelectronics;Springer Series in Optical Sciences;2010
3. Leakage currents and dielectric breakdown of Si1−x−yGexCy thermal oxides;Microelectronics Reliability;2008-10
4. Impact of carbon concentration on 1∕f noise and random telegraph signal noise in SiGe:C heterojunction bipolar transistors;Journal of Applied Physics;2008-06
5. SiGe HBTs implemented with implanted laser-annealed emitters to completely eliminate the transient enhanced diffusion;2008 26th International Conference on Microelectronics;2008-05
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