Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process-Reference-Cited by-同舟云学术

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Characteristics of LiNbO3 memory capacitors fabricated using a low thermal budget process

Published:2001-07 Issue:7 Volume:45 Page:1159-1163
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lim D.G,Jang B.S,Moon S.I,Won C.Y,Yi J

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference17 articles.

1. Epitaxial Growth and Dielectric Properties of(Ba0.24Sr0.76)TiO3Thin Film

2. Ferroelectric gate transistors

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