Ferroelectric gate transistors
Author:
Affiliation:
1. a Electrical and Computer Engineering Department , Rice University , Houston, Texas
2. b Texas Instruments, Inc. , Dallas, Texas
3. c Space Vacuum and Epitaxy Center and Texas Center for Superconductivity University of Houston , Houston, Texas
Publisher
Informa UK Limited
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Ceramics and Composites,Control and Systems Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.tandfonline.com/doi/pdf/10.1080/10584589508019350
Reference8 articles.
1. A new ferroelectric memory device, metal-ferroelectric-semiconductor transistor
2. Pulsed laser deposition and ferroelectric characterization of bismuth titanate films
3. Ferroelectric switching of a field‐effect transistor with a lithium niobate gate insulator
4. Electrical Characterization of Ferroelectric Thin Films of Lithium Niobate on Silicon Substrates
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