Nitride-based blue LEDs with GaN/SiN double buffer layers-Reference-Cited by-同舟云学术

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Nitride-based blue LEDs with GaN/SiN double buffer layers

Published:2003-11 Issue:11 Volume:47 Page:2019-2022
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kuo C.H.,Chang S.J.,Su Y.K.,Wang C.K.,Wu L.W.,Sheu J.K.,Wen T.C.,Lai W.C.,Tsai J.M.,Lin C.C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes

3. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

4. Epitaxial growth of GaN layers with double-buffer layers

5. A new buffer layer for high quality GaN growth by metalorganic vapor phase epitaxy

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Performance Enhancement of GaN-Based Light-Emitting Diodes with Magnesium Nitride Inter-Layers;Journal of Nanoscience and Nanotechnology;2019-03-01

2. Effect of SiN Treatment on Optical Properties of In x Ga1−x N/GaN MQW Blue LEDs;Journal of Electronic Materials;2017-03-01

3. Nitride-based LEDs fabricated on ZnO-buffered sapphire substrates;Journal of the Taiwan Institute of Chemical Engineers;2012-07

4. Nitride-based blue light-emitting diodes with multiple MgxNy/GaN buffer layers;Solid-State Electronics;2010-05

5. Nitride-Based Metal–Semiconductor–Metal Photodetectors with InN/GaN Multiple Nucleation Layers;Japanese Journal of Applied Physics;2010-04-20

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