Device modeling and simulation of the performance of Cu(In1−x,Gax)Se2 solar cells-Reference-Cited by-同舟云学术

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Device modeling and simulation of the performance of Cu(In1−x,Gax)Se2 solar cells

Published:2004-01 Issue:1 Volume:48 Page:73-79
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Song Jiyon,Li Sheng S.,Huang C.H.,Crisalle O.D.,Anderson T.J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Chalcopyrite/defect chalcopyrite heterojunctions on the basis of CuInSe2;Schmid;J. Appl. Phys.,1993

2. Phase segregation, Cu migration and junction formation in Cu(In,Ga)Se2;Herberhoz;Euro. Phys. J. Appl. Phys.,1999

3. Phase and interface stability issues in chalcopyrite-based thin film solar cells;Guillemoles;Mat. Res. Soc. Symp. Proc.,1998

4. Application of AMPS-1D for solar cell simulation;Zhu;AIP Conf. Proc.,1999

5. Band offsets and optical bowings of chalcopyrites and Zn-based II–VI alloys;Wei;J. Appl. Phys.,1995

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